![[Analysis Case] PL Mapping of Multicrystalline Silicon Solar Cells](https://image.mono.ipros.com/public/product/image/f01/2000243744/IPROS10076192363919426961.jpg?w=280&h=280)
[Analysis Case] PL Mapping of Multicrystalline Silicon Solar Cells
It is possible to non-destructively identify the location of defects in solar cell cells.
When light with energy greater than the bandgap of a solar cell is irradiated, carriers are generated, and some of them undergo radiative recombination. The light emitted during this process is called photoluminescence (PL). However, in areas where defects are present, carriers are trapped, resulting in reduced PL intensity. Therefore, by conducting PL mapping measurements, it is possible to non-destructively and easily identify defect locations. Below is an example of identifying defect locations through PL mapping measurements in multicrystalline silicon solar cell modules.
- 企業：一般財団法人材料科学技術振興財団 MST
- 価格：Other
